Products Overview

AOD442 Medium Voltage MOSFETs (40V - 400V)

Alpha and Omega Semiconductor

AOD442 60V N-Channel MOSFET™

The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications.

Product Number: AOD442/AOI442

Class: MOSFETs ,Transistors, FETs-MOSFETs, Single-FETs-MOSFETs

Tag: MOSFETs, Single-FETs-MOSFETs

The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications.
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH Power Dissipation
TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time

Part Number Configuration Channel Material BVDSS Rds On (Max) @ Id, Vgs ID max Power Dissipation (Max) Gate Charge (Qg) (Max) @ Vgs Vgs(th) (Max) @ Id Vgs (Max) Operating Temperature Input Capacitance (Ciss) (Max) @ Vds Package Type
AOD442 single N-Type Silicon 60 V 20mOhm @ 20A, 10V 37 A 2.1W (Ta), 60W (Tc) 68 nC @ 10 V 2.7V @ 250µA ±20V -55°C ~ 175°C (TJ) 2300 pF @ 30 V TO-252-3, DPak (2 Leads + Tab), SC-63

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    Datasheet Download on Aug, 2009

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