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AHV85111: Self-Powered Single-Channel Isolated GaNFET Gate Driver with Regulated Bipolar Output Drive

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications. An isolated dual positive/ negative output bias supply is integrated into the driver device, eliminating external gate drive auxiliary bias supply or high-side bootstrap. The bipolar output rails with adjustable and regulated positive rail improves dv/dt immunity, greatly simplifies the system design, and reduces EMI through reduced total common mode (CM) capacitance. It also allows the driving of a floating switch in any location in a switching power topology.

Product Number: AHV85111

Class: Isolated Gate Drivers

Tag: Isolated Gate Drivers, Isolated GaNFET Gate Driver, Motion

Power-Thru integrated isolated bias
No high-side bootstrap or external secondary-side bias
Bipolar drive output, with adjustable regulated positive rail
Regulated 3.3 V low power bias output
50 ns propagation delay, with excellent device-to-device
matching of 5 ns
Separate drive output pins: pull-up (2.8 Ω) and pull-down (1.0 Ω)

Applications :
AC-DC and DC-DC converters – totem-pole PFC, Half-/Full-Bridge, LLC, SR Drive, multi-level converters, phase-shifted full-bridge, etc.
Automotive – OBC, Traction Drive
Industrial – Transportation, Robotics
Grid Infrastructure – Micro-Inverters, solar

Part Number Isolation Working Voltage Polarity Channels Switch Availability Package Separate drive output pins Operating Temperature Operating Supply Voltage Package Type
AHV85111 5KV 630 bipolar Single GaN available NH pull-up (2.8 Ω) / pull-down (1.0 Ω) -40 °C ~ 125 °C(TJ) 10.5 V ~13.2 V 10 × 7.66 × 2.53 mm 12-pin low-profile surface mount

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    Datasheet Download on Aug, 2022

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