Products Overview
AOD609 COMPLEMENTARY MOSFETS (20V - 60V)
Alpha and Omega Semiconductor
AOD609 Complementary Enhancement Mode Field Effect Transistor
The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Part Number | Configuration | FET Feature | Technology | BVDSS | Rds On (Max) @ Id, Vgs | ID max | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AOD609 | N and P-Channel, Common Drain | Logic Level Gate | MOSFET (Metal Oxide) | 40 V | 30mOhm @ 12A, 10V | 12 A | 2.3W (Ta), 100W (Tc) | 10.8nC @ 10V | 3V @ 250µA | ±25V | -55°C ~ 175°C (TJ) | 650pF @ 20V | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Datasheet Download on Nov, 2018
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